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Grain Enhancement of Thin Silicon Layers Using Optical Processing

Published online by Cambridge University Press:  10 February 2011

B. L. Sopori,
Jeff Alleman,
W. Chen,
T. Y. Tan and
N. M. Ravindra
B. L. Sopori
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
Jeff Alleman
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
W. Chen
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
T. Y. Tan
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27706
N. M. Ravindra
Affiliation:
Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102
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Abstract

We describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on metal-coated substrate followed by a grain enhancement using optical/thermal annealing at low temperatures (∼ 500 °C). The results show that in thin-layer silicon, less than 3 microns, grains can be formed in a short time (few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997, 419
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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