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The Growth Dynamics Of Solid 4He

Published online by Cambridge University Press:  21 February 2011

Chia-Lai Wang and
Glenn Agnolet
Chia-Lai Wang
Affiliation:
Department of Physics, Texas A&M University, College Station, TX 77843
Glenn Agnolet
Affiliation:
Department of Physics, Texas A&M University, College Station, TX 77843
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Abstract

The interfacial properties of the solid-liquid interface of 4He have been studied at temperatures below 0.5 K using crystallization waves. From the dispersion and damping of the crystallization waves, one can determine the interfacial stiffness, ᾶ, and the interfacial growth resistance, (Km)−1, respectively. Our measured values for ᾶ are consistently smaller than previously published values. At the lowest temperatures, the measured (Km)−1 increases as T4 which is consistent with the prediction that the growth velocity is limited by the scattering of ballistic phonons by the moving interface. We also observe that above 0.25 K the phonon damping is dramatically reduced.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991, 79
Copyright
Copyright © Materials Research Society 1992

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References

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