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Growth Mode of CeO2 on Si Surface

Published online by Cambridge University Press:  21 February 2011

Toyohiro Chikyow,
Lee Tye,
Nadia A. El-Masry and
Salah M. Bedair
Toyohiro Chikyow
Affiliation:
Electrical and Computer Engineering, North Carolina State University, Box 7911 Raleigh, North Carolina 27695-7911on leave from National Research Institute for Metals, Tsukuba Laboratories, 1-2-1 Sengen Tsukuba-shi Ibaraki 305, Japan
Lee Tye
Affiliation:
Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7961
Nadia A. El-Masry
Affiliation:
Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7961
Salah M. Bedair
Affiliation:
Electrical and Computer Engineering, North Carolina State University, Box 7911 Raleigh, North Carolina 27695-7911
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Abstract

The interface structure and electrical properties of CeO2/Si (111) grown by laser ablation in ultra high vacuum was investigated by high resolution transmission electron microscopy .Auger electron spectroscopy and capacitance-voltage measurement. The deposited film was single crystalline CeO2 as indicated by RHEED and x-ray diffraction observations. However, during the deposition, a reaction between CeO2 and Si occurred at the interface. This reaction resulted in the formation of an oxygen deficient amorphous CeOX layer and a S1O2 layer. Post annealing in oxygen atmosphere caused the disappearance of the amorphous CeOX and the regrowth of crystalline CeO2. The SiO2 thickness was also increased by annealing. The modified structure of CeO2/SiO2/Si showed a higher break down valtage, compared with the as-deposited sample. From these results, a combination of CeO2 and SiO2 can have a great potential for SOI structure.

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