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Heterojunction Ohmic Contacts to Si Using Ge/Si n+/n+ Structures

Published online by Cambridge University Press:  26 February 2011

M. J. Hafich,
R. L. Gillenwater,
G. Y. Robinson and
P. Sheldon
M. J. Hafich
Affiliation:
Colorado State University, Fort Collins, CO 80523
R. L. Gillenwater
Affiliation:
Colorado State University, Fort Collins, CO 80523
G. Y. Robinson
Affiliation:
Colorado State University, Fort Collins, CO 80523
P. Sheldon
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
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Abstract

Ohmic contacts to n-type Si have been formed using a thin n layer of Ge grown by selective-area molecular beam epitaxy. The n+Ge is used to lower the metal-semiconductor barrier energy and thus reduce the contact resistivity of the thin film structure. Al/n+Ge/n+Si test devices were fabricated in a manner compatible with conventional VLSI processing and consisted of a 3500 A thick layer of arsenic-doped Ge grown at 250°C on a selectively diffused, phosphorus-doped Si substrate. Using both four terminal Kelvin and transmission line devices, unsintered Al/Ge/Si structures exhibited contact resistivities a factor of five lower than Al/Si control devices, in agreement with theoretical calculations based on a simple tunneling model for the metal/Ge/Si heterojunction ohmic contact.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985, 511
Copyright
Copyright © Materials Research Society 1986

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References

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