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Hexagonal Silicon, a Stress-Induced Martesitic Transformation

Published online by Cambridge University Press:  26 February 2011

P. Pirouz,
R. Chaim and
U. Dahmen
P. Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106
R. Chaim
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106
U. Dahmen
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
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Abstract

It is shown that indentation-induced formation of hexagonal silicon at the temperature range 400–700°C is fully consistent with its occurence via a martensitic transformation. After presenting HREM images of hexagonal ribbons in a diamond cubic matrix, a crystallographic analysis of the phase transformation is given, and a dislocation mechanism responsible for the transformation is discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987, 133
Copyright
Copyright © Materials Research Society 1988

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Footnotes

⌜

Present address: Department of Materials Engineering, Technion Institute of Technology, Haifa 32000, Israel

References

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