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HfO2-based Thin Films Deposited by RF Magnetron Sputtering

Published online by Cambridge University Press:  31 January 2011

Larysa Khomenkova,
Christian Dufour,
Pierre-Eugène Coulon,
Caroline Bonafos and
Fabrice Gourbilleau
Larysa Khomenkova
Affiliation:
larysa.khomenkova@ensicaen.fr, CIMAP, UMR CNRS 6252, ENSICAEN, Caen, France
Christian Dufour
Affiliation:
christian.dufour@ensicaen.fr, CIMAP, UMR CNRS 6252, ENSICAEN, Caen, France
Pierre-Eugène Coulon
Affiliation:
pecoulon@cemes.fr, CEMES/CNRS, Toulouse, France
Caroline Bonafos
Affiliation:
bonafos@cemes.fr, CEMES/CNRS, Toulouse, France
Fabrice Gourbilleau
Affiliation:
fabrice.gourbilleau@ensicaen.fr, CIMAP, 6, Blvd Maréchal Juin, Caen, 14050, France
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Abstract

HfO2-based layers prepared by RF magnetron sputtering were studied by X-ray diffraction, infrared absorption spectroscopy and transmission electron microscopy techniques. The effect of the deposition parameters and post-deposition annealing treatment on the properties of the layers was investigated. The amorphous-crystalline transformation of pure HfO2 layers is observed to be stimulated by annealing treatment at 800 ° C. It was found that the incorporation of silicon in HfO2 matrix allows to prevent crystallization of the layers and to shift the crystallization temperature to values up to 900 °C.

Keywords

sputteringx-ray diffraction (XRD)transmission electron microscopy (TEM)

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009, 1160-H05-08
Copyright
Copyright © Materials Research Society 2009

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