Hostname: page-component-7b7567c8c-kwt9d Total loading time: 0 Render date: 2026-11-15T02:03:57.005Z Has data issue: false hasContentIssue false
  • English
  • Français

High Gain, Low Noise InP Heut for Millimeter-Wave Application

Published online by Cambridge University Press:  22 February 2011

C. Yuen,
Y. C. Pao,
N. Chiang and
N. G. Bechtel
C. Yuen
Affiliation:
Litton Solid State Division 3251 Olcott Street, Santa Clara, CA. 95054 Tel: (408) 562-2922
Y. C. Pao
Affiliation:
Litton Solid State Division 3251 Olcott Street, Santa Clara, CA. 95054 Tel: (408) 562-2922
N. Chiang
Affiliation:
Litton Solid State Division 3251 Olcott Street, Santa Clara, CA. 95054 Tel: (408) 562-2922
N. G. Bechtel
Affiliation:
Litton Solid State Division 3251 Olcott Street, Santa Clara, CA. 95054 Tel: (408) 562-2922
Get access

Abstract

Lattice matched InP HEMT has demonstrated superior gain and noise figure performance compared to the AlGaAs HEMT and PHEMT. The gain and noise figure advantages of the InP HEMT have been transferred to the excellent MMIC performance in the millimeter-wave region.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Smith, P.M. et al. , “Microwave InAlAs/InGaAs/InP HEMTs: Status and applications”, 2nd Int'l Conf. on InP and Related Materials, p.39, Apr. 1990.Google Scholar
2. Majidi-Ahy, R. et al. , “5-100 GHz InP CPW MMIC 7-section Distributed Amplifier”, IEEE Trans. Microwave Theory Tech., Vol. 38, NO. 12, p.2016, Dec. 1990.Google Scholar
3. Majidi-Ahy, R. et al. , “100 GHz High-Gain InP MMIC Cascode Amplifier”, GaAs IC Symp. digest, p.173, Oct., 1990.Google Scholar
4. Yuen, C. et al. , “5-60 GHz High-Gain Distributed Amplifier Utilizing InP Cascode HEMTs”, GaAs IC Symp. digest, p.319, Oct., 1991.Google Scholar
5. Pao, Y.C. et al. , “Characterization of Surface-Undoped Ino. 5 2AIO.4 8As/Ino. 5 3 Gao.4 7 As/InP High Electron Mobility Transistors”, IEEE Trans. on Electron Devices, Vol. 37, No.10, p.2165, Oct., 1990.Google Scholar