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High Hf Content NITIHF Shape Memory Films

Published online by Cambridge University Press:  15 February 2011

Chen Zhang,
Paul E. Thoma and
Ralph Zee
Chen Zhang
Affiliation:
Materials Research and Education Center, ME Department, Auburn University, Auburn, AL 36849, czhang@eng.aubum.edu
Paul E. Thoma
Affiliation:
Corporate Technology, Johnson Controls, Inc., 1701 West Civic Dr., Milwaukee, WI 53209
Ralph Zee
Affiliation:
Materials Research and Education Center, ME Department, Auburn University, Auburn, AL 36849, czhang@eng.aubum.edu
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Abstract

Polycrystalline NiTiHf films with around 9at% Hf have been successfully deposited from a single NiTiHf target using a DC magnetron sputtering system. Free standing films were obtained by depositing the films on single crystal silicon substrates. Thickness of the films was controlled between 10-12µm. In this investigation, the effects of deposition temperature on the crystallinity and transformation temperatures of the films were studied. Substrate temperature during deposition was varied between 300°C and 700°C at 100°C intervals. The influence of heat treatment temperature on the properties of the films was also investigated. The heat treatment temperature was between 300°C and 800°C at 100° C intervals. Transformation temperatures of these films were determined by differential scanning calorimetry (DSC). The crystallinity was determined using x-ray diffractometry. It was found that all the as-deposited films were crystalline even when the substrate temperature was as low as 300°C. Both martensite and austenite transformation temperatures increase with increasing substrate temperature and increasing heat treatment temperature.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 604: Symposium LL – Materials for Smart Systems III , 1999, 129
Copyright
Copyright © Materials Research Society 2000

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