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High Performance CuMetallized GaAs HEMTs Processing and Reliability

Published online by Cambridge University Press:  10 February 2011

T. Feng,
A. Dimoulas,
N. Strifas and
A. Christou
T. Feng
Affiliation:
Department of Materials and Nuclear Engineering University of Maryland College Park, MD 20742, USA
A. Dimoulas
Affiliation:
Department of Materials and Nuclear Engineering University of Maryland College Park, MD 20742, USA
N. Strifas
Affiliation:
Department of Materials and Nuclear Engineering University of Maryland College Park, MD 20742, USA
A. Christou
Affiliation:
Department of Materials and Nuclear Engineering University of Maryland College Park, MD 20742, USA
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Abstract

AlGaAs/GaAs based high electron mobility transistors (HEMTs) with Cu/Ti metallized gates have been fabricated. Copper gates were used to achieve low gate resistance and to minimize the hydrogen induced device degradation. The DC measurement of the processed AlGaAs/GaAs HEMTs with Cu/Ti gates shows comparable performance to similar Au based GaAs HEMTs. The Cu-based HEMTs were also subjected to elevated temperature testing under 5% H2 –N2 forming gas up to 250°C and 8 hours and no degradation due to hydrogen effects was found.

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