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High Precision Physical Model for Nickel MILC

Published online by Cambridge University Press:  01 February 2011

C. F. Cheng,
W. M. Cheung,
K. L. Ng,
P. J. Chan,
M. C. Poon,
Mansun Chan and
C. W. Kok
C. F. Cheng
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Sai Kung, Hong Kong
W. M. Cheung
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Sai Kung, Hong Kong
K. L. Ng
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Sai Kung, Hong Kong
P. J. Chan
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Sai Kung, Hong Kong
M. C. Poon
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Sai Kung, Hong Kong
Mansun Chan
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Sai Kung, Hong Kong
C. W. Kok
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Sai Kung, Hong Kong
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Abstract

Mechanism and growth rate of Metal-Induced-Lateral-Crystallization (MILC) with annealing temperature range from 550°C to 625°C were studied. Base on the MILC growth mechanism and effect of metal diffusion, a modeling on metal impurity distribution was developed. The modeling can be used to predict the distribution of metal impurity formed in the polysilicon layer after MILC annealing process. By applying the modeling, effects of annealing on the metal impurity distribution can be analyzed.

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References

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