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High-density Co/Al2O3 core-shell nanocrystal memory

Published online by Cambridge University Press:  25 May 2012

Huimei Zhou,
Zonglin Li,
Jian Huang and
Jianlin Liu
Huimei Zhou
Affiliation:
Department of Electrical Engineering, University of California, Riverside, California 92521
Zonglin Li
Affiliation:
Department of Electrical Engineering, University of California, Riverside, California 92521
Jian Huang
Affiliation:
Department of Electrical Engineering, University of California, Riverside, California 92521
Jianlin Liu
Affiliation:
Department of Electrical Engineering, University of California, Riverside, California 92521
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Abstract

Metal/high-k dielectric core-shell nanocrystal (NC) memory capacitors were demonstrated by e-beam evaporation process. This kind of metal oxide semiconductor (MOS) memory shows good performance in charge storage, programming and erasing speeds. Compared to Co NC memory, Co/Al2O3 core-shell NC memory shows improved retention performance since the additional Al2O3 shell layer acts as a barrier, which prevent the leakage.

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