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High-Frequency Field Effects on Ionic Defect Concentrations and Solid-State Diffusion Processes

Published online by Cambridge University Press:  10 February 2011

S. A. Freeman,
J. H. Booske and
R. F. Cooper
S. A. Freeman
Affiliation:
Materials Science Program, Univ. of Wisconsin, Madision, WI 53706, freeman@cae.wisc.edu
J. H. Booske
Affiliation:
ECE Department, Univ. of Wisconsin, Madision, WI 53706, booske@ece.wisc.edu
R. F. Cooper
Affiliation:
MS&E Department, Univ. of Wisconsin, Madision, WI 53706, cooper@engr.wisc.edu
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Abstract

We describe computer simulations of a microwave-induced driving force for ionic transport. The simulations are based on a model which predicts rectification of ionic fluxes at interfaces and a resulting depletion or accumulation of defects near the interface. Some details of the model are discussed, results of the simulations are presented, and the impact of these effects on sintering and diffusion is discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 430: Symposium O – Microwave Processing of Materials V , 1996, 417
Copyright
Copyright © Materials Research Society 1996

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References

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