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High-Quality Alx Ga1−x N Using Low Temperature-Interlayer and its Application to UV Detector

Published online by Cambridge University Press:  03 September 2012

M. Iwaya,
S. Terao,
N. Hayashi,
T. Kashima,
T. Detchprohm,
H. Amano,
I. Akasaki,
A. Hirano and
C. Pernot
M. Iwaya
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
S. Terao
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
N. Hayashi
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
T. Kashima
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
T. Detchprohm
Affiliation:
High Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanHigh Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanHigh Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
A. Hirano
Affiliation:
Research and Development Department, Osaka Gas Co. Ltd., 17 Chudoji-Awata-machi, Shimogyo-ku, Kyoto 600-8815, Japan
C. Pernot
Affiliation:
Research and Development Department, Osaka Gas Co. Ltd., 17 Chudoji-Awata-machi, Shimogyo-ku, Kyoto 600-8815, JapanInvited researcher from Groupe d'Etude des Semiconducteurs, Universite Montpellier II, Place Eugene Bataillon, 34095 Montpellier Cedex 05, France
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Abstract

Low-temperature (LT-) AlN interlayer reduces tensile stress during growth of Alx Ga1−x N, while simultaneously acts as the dislocation filter, especially for dislocations of which Burger's vector contains [0001] components. UV photodetectors using thus-grown high quality Alx Ga1−x N layers were fabricated. The dark current bellow 50 fA at 10 V bias for 10 [.mu]m strip allowing a photocurrent to dark current ratio greater than one even at 40 nW/cm2 have been achieved.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999, F99W1.10
Copyright
Copyright © Materials Research Society 1999

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