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How Epitaxial Are Pd2Si–Si Interfaces?

Published online by Cambridge University Press:  15 February 2011

Z. Liliental,
R. W. Carpenter and
R. Tuenge
Z. Liliental*
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287, (U.S.A.) and Tektronix, Beaverton, (OR U.S.A.)
R. W. Carpenter
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287, (U.S.A.) and Tektronix, Beaverton, (OR U.S.A.)
R. Tuenge
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287, (U.S.A.) and Tektronix, Beaverton, (OR U.S.A.)
*
† Present address: Department of Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Abstract

Pd2Si layers produced by evaporation or sputtering onto silicon substrates were examined by high resolution electron microscopy, microdiffraction, X-ray, energy loss and Auger spectroscopy. The Si-Pd2Si interfaces produced by evaporation were in all cases rougher and more polycrystalline than those produced by sputtering. X-ray microanalysis showed the predictable variation in palladium distribution across the interface but quantification did not produce the expected palladium–to–silicon ratios, primarily because of probe broadening and X-rayinduced fluorescence. Energy loss spectra showed plasmon energy shifts and changes in Si L edge shape due to bond formation with palladium. Auger data provided evidence for a small amount of oxygen at the Si-Pd2Si interface. Electrical measurements of the ideality factor for Schottky barriers made from these materials produced higher values for the rougher evaporation-formed interfaces consistent with interface-roughness-induced scattering and carrier recombination.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982, 17
Copyright
Copyright © Materials Research Society 1982

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References

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