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HVPE-GROWN AlGaN/GaN HEMTs

Published online by Cambridge University Press:  01 February 2011

B. Luo,
F. Ren,
M. A. Mastro,
D. Tsvetkov,
A. Pechnikov,
V. Soukhoveev,
V. Dmitriev,
K. H. Baik and
S. J. Pearton
B. Luo
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611
F. Ren
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611
M. A. Mastro
Affiliation:
TDI, Inc Silver Spring, MD 20904
D. Tsvetkov
Affiliation:
TDI, Inc Silver Spring, MD 20904
A. Pechnikov
Affiliation:
TDI, Inc Silver Spring, MD 20904
V. Soukhoveev
Affiliation:
TDI, Inc Silver Spring, MD 20904
V. Dmitriev
Affiliation:
TDI, Inc Silver Spring, MD 20904
K. H. Baik
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
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Abstract

High quality undoped AlGaN/GaN high electron mobility transistors(HEMTs) structures have been gorwn by Hydride Vapor Phase Epitaxy (HVPE). The morphology of the films grown on Al2O3 substrates is excellent with root-mean-square roughness of ∼0.2nm over 10×10μm2 measurement area. Capacitance-voltage measurements show formation of dense sheet of charge at the AlGaN/GaN interface. HEMTs with 1μm gate length fabricated on these structures show transconductances in excess of 110 mS/mm and drain-source current above 0.6A/mm. Gate lag measurements show similar current collapse characteristics to HEMTs fabricated in MBE- or MOCVD grown material.

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