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Hydrogen Diffusion and Solubility in A-Si:H

Published online by Cambridge University Press:  16 February 2011

Wolfhard Beyer and
Heribert Wagner
Wolfhard Beyer
Affiliation:
ISI-PV, Forschungszentrum Juelich, D-52425 Juelich, Germany
Heribert Wagner
Affiliation:
ISI-PV, Forschungszentrum Juelich, D-52425 Juelich, Germany
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Abstract

For plasma-grown a-Si:H films deposited at substrate temperatures between 100 and 580°C the diffusion of hydrogen was studied by SIMS profiling of H/D interdiffusion and by hydrogen evolution. The solubility for deuterium penetration into a-Si:H is found to be limited by the hydrogen concentration. Diffusion prefactors and activation energies evaluated for a constant diffusion length follow a Meyer-Neldel rule. The diffusion free energies obtained by interdiffusion and evolution experiments agree closely up to about 400°C but disagree at higher substrate temperatures.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994, 323
Copyright
Copyright © Materials Research Society 1994

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References

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