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Hydrogen Diffusion Between Plasma-Deposited Silicon Nitridepolyimide Polymer Interfaces

Published online by Cambridge University Press:  21 February 2011

Son Van Nguyen and
Mike Kerbaugh
Son Van Nguyen
Affiliation:
International Business Machines Corporation General Products Division San Jose, California
Mike Kerbaugh
Affiliation:
International Business Machines Corporation General Technology Division Essex Junction, Vermont
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Abstract

A Nuclear Reaction Analysis (NRA) for Hydrogen technique was used to analyze the hydrogen concentration near Plasma Enchanced Chemical Vapor Deposition (PECVD) silicon nitride-polyimide interfaces at various nitride-deposition and polyimide-polymer-curing temperatures. The CF4 + O2 (8% O2) plasma-etch-rate variation of PECVD silicon nitride films deposited on polyimide appeared to correlate well with the variation of hydrogen-depth profiles in the nitride films. The NRA data indicate that hydrogen-depth-profile fluctuation in the nitride films is due to hydrogen diffusion between the nitride-polyimide interfaces during deposition. Annealing treatment of polyimide films in a hydrogen atmosphere prior to the nitride film deposition tends to enhance the hydrogen-depth-profile uniformity in the nitride films, and thus substantially reduces or eliminates variation in the nitride plasma-etch rate.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 108 , 1987, 247
Copyright
Copyright © Materials Research Society 1988

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References

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