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Hydrogen Diffusion in n-GaAs:Si Under Hydrostatic Pressure

Published online by Cambridge University Press:  26 February 2011

B. Machayekhi,
J. Chevallier,
B. Theys,
J. M. Besson,
G. Weill and
G. Syfosse
B. Machayekhi
Affiliation:
Laboratoire de Physique des Solides de Bellevue, CNRS, 1 place Aristide Briand, 92195 Meudon Cedex, (France)
J. Chevallier
Affiliation:
Laboratoire de Physique des Solides de Bellevue, CNRS, 1 place Aristide Briand, 92195 Meudon Cedex, (France)
B. Theys
Affiliation:
Laboratoire de Physique des Solides de Bellevue, CNRS, 1 place Aristide Briand, 92195 Meudon Cedex, (France)
J. M. Besson
Affiliation:
Physique des Milieux Condensés, URA 782, Université Pierre et Marie Curie, 4 place Jussieu, 75005 Paris, (France)
G. Weill
Affiliation:
Physique des Milieux Condensés, URA 782, Université Pierre et Marie Curie, 4 place Jussieu, 75005 Paris, (France)
G. Syfosse
Affiliation:
Département des Hautes Pressions, Université Pierre et Marie Curie, 4 place Jussieu, 75005 PARIS, (France)
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Abstract

It has recently been shown that deuterium diffusion experiments can provide information on the deepening of the hydrogen acceptor level in the band gap of AlxGa1-xAs alloys with increasing x. In the present work, we report on the influence of hydrostatic pressure on deuterium diffusion in n-GaAs:Si. SIMS analysis reveals that the deuterium profiles in n-GaAs:Si are sensitive to hydrostatic pressure: the diffusion depth decreases and a plateau appears in the diffusion profile as the pressure is applied. The results are interpreted in terms of an increasing amount of the H- species as pressure is applied. This increase is mainly attributed to a deepening of the H acceptor level with respect to the bottom of the Γ conduction band of GaAs. Qualitatively, this effect is similar to the deepening of the H acceptor level in AlxGa1-xAs alloys as x increases.

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References

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