Hostname: page-component-7b7567c8c-7pwfn Total loading time: 0 Render date: 2026-11-13T16:10:48.618Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen Diffusion in Undoped a-Si:H

Published online by Cambridge University Press:  26 February 2011

S. F. Chou,
R. Schwarz,
Y. Okada,
D. SLOBODIN and
S. Wagner
S. F. Chou
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
R. Schwarz
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544Now with Physik-Department, Technical University of Munich, Germany.
Y. Okada
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
D. SLOBODIN
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544Now with Polaroid Corporation, Waltham, Massachusetts.
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
Get access

Abstract

We measured the diffusion coefficient of H in a-Si:H between 36°C and 690°C via H2-evolution and the pressure rise in a closed ampoule. Our measurement temperatures reached ∼110°C above the highest T reported to date. The diffusion coefficient for unalloyed a-Si:H, DH=1.66×10−3 exp [−1.45 eV/kT] cm2 s−1, agrees with the earlier, lower-T, measurements. Between 250°C and 690°C the H-diffusion mechanism in a-Si:H appears to remain the same, with DH ranging from 10−17 cm2s−1 to 10−10cm 2s−1.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

a) Now with Physik-Department, Technical University of Munich, Germany.Google Scholar
b) Now with Polaroid Corporation, Waltham, Massachusetts.Google Scholar
1. Carlson, D.E. and Magee, C.W., Apph. Phys. Lett. 33, 81 (1978).Google Scholar
2. Beyer, W. and Wagner, H., J. App]. Phys. 53, 8745 (1982).Google Scholar
3. Reinelt, M., Kalbitzer, S. and Müller, G., J. Non-Cryst. Solids 59 & 60, 169 (1983).Google Scholar
4. Street, R.A., Tsai, C.C., Kakalios, J. and Jackson, W.B., Phil. Mag., in press.Google Scholar
5. Tsai, C.C. and Street, R.A., Internat. Conf. on Stability of Amorphous Silicon Alloy Materials and Devices, Palo Alto, Jan. 28-30, 1987. AIP Conf. Proc., to be published.Google Scholar
6. Kakalios, J., Street, R.A. and Jackson, W.B., to be published.Google Scholar
7. Slobodin, D., Kolodzey, J., Aljishi, S., Okada, Y., Chu, V., Shen, D.S., Schwarz, R. and Wagner, S., Conf. Record 18th IEEE Photovoltaic Specialists Conference, October 22-25, 1985; Las Vegas; Institute of Electrical and Electronic Engineers, New York, 1985; pp. 1505–1512.Google Scholar
8. Chu, T.L., Chu, S.S., Ang, S.T., Lo, D.H., Duong, A. and Hwang, C.G., J. Appl. Phys. 59, 1319 (1986).Google Scholar
9. Hatano, A. and Nitta, S., Solid State Physics (in Japanese) 19, 283 (1984).Google Scholar
10. Brodsky, M.H., Frisch, M.A., Ziegler, J.F. and Lanford, W.A., Appl. Phys. Lett. 30, 561 (1977).Google Scholar
11. McMillan, J.A. and Peterson, E.M., J. Apph. Phys. 50, 5238 (1979).Google Scholar
12. Shewmon, P.G., “Diffusion in Solids,” McGraw-Hill, New York 1963, p. 17.Google Scholar