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Hydrogen in Silicon

Published online by Cambridge University Press:  26 February 2011

J. W. Corbett,
J. L. Lindström and
S. J. Pearton
J. W. Corbett
Affiliation:
Physics Department, The University at Albany, Albany, NY 12222 USA
J. L. Lindström
Affiliation:
AT&T Bell Laboratories, Murray Hill, NY 07974 USA
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NY 07974 USA
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Abstract

We summarize the recent results in hydrogen passivation in silicon, including presenting comprehensive diffusion profiles, i.e., profiles in floating zone n-type and p-type silicon vs resistivity. Domination of hydrogen diffusion by impurity trapping is clearly indicated for part of the profile in low resistivity p-type Si. Also mentioned are the current models of hydrogen passivation of dangling bonds, shallow acceptors, shallow donors, and hyper-deep defects.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987, 229
Copyright
Copyright © Materials Research Society 1988

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Footnotes

**

Permanent Address: Försvarets Forskningsanstalt, Huvudavdelning 3, Box 1165, S- 581 11 Linköping, SWEDEN

References

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