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Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

Published online by Cambridge University Press:  21 February 2011

Shuji Kiyohara and
Iwao Miyamoto
Shuji Kiyohara
Affiliation:
Department of Applied Electronics, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278, Japan
Iwao Miyamoto
Affiliation:
Department of Applied Electronics, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278, Japan
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Abstract

In order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

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References

1 Miyamoto, I., Energy-Beam Processing of Materials, §4 Ion-Beam Processing, (Oxford Univ. Press, 1989) p. 200.Google Scholar
2 Miyamoto, I. and Taniguchi, N., Bull, of the Japan Soc. for Prec. Engg. 13(4), 219 (1979); 16(3), 181 (1982).Google Scholar
3 Whetten, Timothy J., Armstead, Angela A., Grzybowski, Thomas A., and Ruoff, Arthur L., J. Vac. Sci. Technol. A2(2), 477 (1984).Google Scholar
4 Efremow, N. N., Geis, M. W., Flanders, D. C., Lincoln, G. A., and Economou, N. P., J. Vac. Sci. Technol., B3(1), 416 (1985).Google Scholar
5 Sandhu, G. S. and Chu, W. K., Appl. Phys. Lett. 55(5), 437 (1989).Google Scholar
6 Kaufman, H. R., Cuomo, J. J. and Harper, J. M. E., J. Vac. Sci. Technol. 21(3), 725 (1982).Google Scholar
7 Harper, J. M. E., Cuomo, J. J. and Kaufman, H. R., J. Vac. Sci. Technol., 21(3), 737 (1982).Google Scholar
8 Miyamoto, I. and Kiyohara, S., Proceedings from American Soc. for Prec. Engg. 1993 Annual Meeting, 8, 301 (1993).Google Scholar
9 Kiyohara, S. and Miyamoto, I., Advancement of Intelligent Production, The Japan Soc. for Prec. Engg. Publication Series No.1, 576 (1994).Google Scholar
10 Bining, G. and Quate, C. F., Phys. Rev. Lett. 56(9), 930 (1986).Google Scholar
11 Albrecht, T. R., Akamine, S., Carver, T. E., and Quate, C. F., J. Vac. Sci. Technol. A8(4), 3386 (1990).Google Scholar