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Hydrogen Segregation at the Al/Si Interface Studied Using a Nuclear Resonant Reaction

Published online by Cambridge University Press:  25 February 2011

Joyce C. Liu,
A.D. Marwick and
F.K. Legoues
Joyce C. Liu
Affiliation:
IBM, T.J. Watson Research Center, Yorktown Heights, NY 10598
A.D. Marwick
Affiliation:
IBM, T.J. Watson Research Center, Yorktown Heights, NY 10598
F.K. Legoues
Affiliation:
IBM, T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Hydrogen segregation at the interface between an epitaxial Al film and a Si (111) substrate is studied using the 1 H(15 N, αγ)12 C nuclear resonant reaction. Hydrogen depth profiles show that H atoms diffuse through the 1600 Å thick Al layer during 500 eV H implantation and are trapped at the Al/Si interface. The total amount of interface H is about 2 × 1015 /cm2 after a 1.4 × 1018 H/cm2 implantation, and the H atoms are narrowly distributed in the direction normal to the interface. During an isothermal anneal at 360 K, the amount of interface H decreases exponentially with annealing time; and during ramp annealing from 110 to 500 K, an abrupt release of the interface H is observed at temperature around 380 K. The release rates in both cases are controlled by a first order thermally activated de-trapping process with a binding energy of 0.86 eV/atom.

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References

1 Biersack, J. and Haggmark, L., Nucl. Instr. Methods 174, 257 (1980).Google Scholar
2 Damjantschitsch, H., Weiser, M., Heusser, G., Kalbitzer, S., and Mannsperger, H., Nucl. Instr. Meth. 218, 129 (1983).Google Scholar
3 Fukushima, H. and Birnbaum, H., Acta Metall. 32, 851 (1984).Google Scholar
4 Gale, R., Feigl, F., Magee, C., and Young, D., J. Appl. Phys. 54, 6938 (1983).Google Scholar
5 Ishikawa, T. and McLellan, R., Acta Metall. 34, 1091 (1986).Google Scholar
6 LeGoues, F., Krakow, W., and Ho, R., Phil. Mag. A 53, 833 (1986).Google Scholar
7 Marwick, A. and Young, D., J. Appl. Phys. 63, 2291 (1988).Google Scholar
8 Myers, S. and Picraux, S., J. Appl. Phys. 50, 5710 (1979).Google Scholar
9 Rud, N., Bottiger, J., and Jensen, P., Nucl. Instr. Meth. 151, 247 (1978).Google Scholar
10 Shewmon, P., Shen, Y., Shen, C., and Meshi, M., Acta Metall. 37, 1913 (1989).Google Scholar
11 Zinke-Allmang, M., Kalbitzer, S., and Weiser, M., Z. Phys. A 320, 697 (1985).Google Scholar