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Impurity Diffusion in Silicon Annealed by Semi-Continuous Laser

Published online by Cambridge University Press:  15 February 2011

Jean-Eric Bouree,
Claude Leray and
Michel Rodot
Jean-Eric Bouree
Affiliation:
CNRS, 1 Place A. Briand, 92190 - Meudon, France
Claude Leray
Affiliation:
CNRS, 1 Place A. Briand, 92190 - Meudon, France
Michel Rodot
Affiliation:
CNRS, 1 Place A. Briand, 92190 - Meudon, France
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Abstract

The diffusion of an impurity into a solid which is irradiated by laser pulses of some milliseconds duration has been analysed in terms of effective diffusion time and temperature. In the case of Fe in Si, the diffusion coefficient is found to be similar to that measured by COLLINS and CARLSON, and independent of boron doping. In the case of Al in Si, a value of 2.10–10 cm2/ at 1400°C has been found both for single crystals and for fine-grained polycrystals.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982, 221
Copyright
Copyright © Materials Research Society 1983

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References

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