Hostname: page-component-7b7567c8c-lpg2g Total loading time: 0 Render date: 2026-11-15T11:21:29.079Z Has data issue: false hasContentIssue false
  • English
  • Français

Integrated GaAs Diode Technology for Millimeter and Submillimeter-wave Components and Systems

Published online by Cambridge University Press:  10 February 2011

Thomas W. Crowe,
Jeffrey L. Hesler,
William L. Bishop,
Willie E. Bowen,
Richard F. Bradley,
Saini Kamaljeet,
Steven M. Marazita and
David W. Porterfield
Thomas W. Crowe
Affiliation:
University of Virginia, Department of Electrical Engineering, 351 McCormick Road PO Box 400743, Charlottesville, VA 22904–4743
Jeffrey L. Hesler
Affiliation:
University of Virginia, Department of Electrical Engineering, 351 McCormick Road PO Box 400743, Charlottesville, VA 22904–4743
William L. Bishop
Affiliation:
University of Virginia, Department of Electrical Engineering, 351 McCormick Road PO Box 400743, Charlottesville, VA 22904–4743
Willie E. Bowen
Affiliation:
University of Virginia, Department of Electrical Engineering, 351 McCormick Road PO Box 400743, Charlottesville, VA 22904–4743
Richard F. Bradley
Affiliation:
National Radio Astronomy Observatory, 2015 Ivy Road, Suite 219 Charlottesville, VA 22903
Saini Kamaljeet
Affiliation:
National Radio Astronomy Observatory, 2015 Ivy Road, Suite 219 Charlottesville, VA 22903
Steven M. Marazita
Affiliation:
Virginia Millimeter Wave, Inc. 706 Forest Street, Suite D Charlottesville, VA 22903
David W. Porterfield
Affiliation:
Virginia Millimeter Wave, Inc. 706 Forest Street, Suite D Charlottesville, VA 22903
Get access

Abstract

GaAs Schottky barrier diodes remain a workhorse technology for submillimeter-wave applications including radio astronomy, chemical spectroscopy, atmospheric studies, plasma diagnostics and compact range radar. This is because of the inherent speed of these devices and their ability to operate at room temperature. Although planar (flip-chip and beam-lead) diodes are replacing whisker contacted diodes throughout this frequency range, the handling and placement of such small GaAs chips limits performance and greatly increases component costs. Through the use of a novel wafer bonding process we have fabricated and tested submillimeter-wave components where the GaAs diode is integrated on a quartz substrate along with other circuit elements such as filters, probes and bias lines. This not only eliminates the cost of handling microscopically small chips, but also improves circuit performance. This is because the parasitic capacitance is reduced by the elimination of the GaAs substrate and the electrical embedding impedance seen by the diodes is more precisely controlled. Our wafer bonding process has been demonstrated through the fabrication and testing of a fundamental mixer at 585 GHz (Tmix < 1200K) and a 380 GHz subharmonically pumped mixer (Tmix < 1000K). This paper reviews the wafer bonding process and discusses how it can be used to greatly improve the performance and manufacturability of submillimeter-wave components.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Phillips, T.G., Keene, J., “Submillimeter Astronomy,” Proceedings of IEEE Special Issue on Terahertz Technology, Vol. 80, No. 11, pp. 1662–1678, Nov. 1992.Google Scholar
[2] Waters, J.W., “Submillimeter-Wavelength Heterodyne Spectroscopy and Remote Sensing of the Upper Atmosphere,” Proc. IEEE, Vol. 80, No. 11, pp. 1679–1701, Nov. 1992.Google Scholar
[3] Cruzan, J.D., Braly, L.B., Liu, K., Brown, M.G., Loeser, J.G., Saykally, R.J., “Quantifying Hydrogen Bond Cooperativity in Water: VRT Spectroscopy of the Water Tetramer,” Science, Vol. 271, pp. 59–62, 5 January 1996 (for example).Google Scholar
[4] Behn, R., Dicken, D., Hackman, J., Salito, S.A., Siegrist, M.R., Krug, P.A., Kjelberg, I., Duval, B., Joye, B. and Pochelon, A., “Ion Temperature Measurements of a Tokamak Plasma by Collective Thomson Scattering of D20 Laser Radiation,” Phys. Rev. Lett., Vol. 64, No. 24, pp. 2833–2836, 12 June 1989 (for example).Google Scholar
[5] Galin, I., “A Mixer up to 300 GHz with Whiskerless Schottky Diodes for Spaceborne Radiometers,” 7th Intl. Symp. Space THz Tech., Charlottesville, VA, pp. 474–476, March 1996.Google Scholar
[6] Gearhart, S.S. and Rebeiz, G.M., “A Monolithic 250 GHz Schottky Diode Receiver,” IEEE Trans. Microwave Theory and Tech., Vol. 42, No. 12, pp. 2504–2511, Dec. 1994.Google Scholar
[7] Erickson, N.R., “Wideband High Efficiency Planar Diode Doublers,” Proc. Ninth Intl. Symp. Space THz Techn., pp. 473–480, Pasadena, CA, March 1998.Google Scholar
[8] Hesler, J.L., Hall, W.R., Crowe, T.W., Weikle, R.M. II, Deaver, B.S. Jr, Bradley, R.F., Pan, S.K., “Fixed-Tuned Submillimeter Wavelength Waveguide Mixers Using Planar Schottky-Barrier Diodes,” IEEE Trans. on Microwave Theory and Tech., Vol. 45, No. 5, May 1997.Google Scholar
[9] Hesler, J.L., “Planar Schottky Diodes in Submillimeter-Wavelength Waveguide Receivers,” Dissertation, University of Virginia, Department of Electrical Engineering, p. 123, January 1996.Google Scholar
[10] Marazita, Steven M., Hesler, Jeffrey L., Feinäugle, Roland, Bishop, William L., and Crowe, Thomas W., “Planar Schottky Mixer Development to 1 THz and Beyond,” Proceedings of the 9th Intl. Symp. on Space THz Tech., Pasadena, CA, March 17–19, 1998.Google Scholar
[11] Marazita, S.M., Bishop, W.L., Hesler, J.L., Hui, K. Crowe, T.W., “Integrated GaAs Schottky Mixers by Spin-On-Dielectric Wafer Bonding, in press, IEEE Trans. Electron Devices, June 2000.Google Scholar
[12] Marazita, S.M., “Integrated Planar Schottky Mixers for Submillimeter Wavelength Receivers,” Doctoral Dissertation, University of Virginia, Charlottesville, VA, May 1999.Google Scholar
[13] Bowen, W.E., “Thermal Stability of GaAs/Quartz Wafer Bonding with Spin-on-Dielectric Adhesive,” Master of Science Thesis, University of Virginia, Charlottesville, VA, Jan. 2000.Google Scholar
[14] Bishop, W.L., Crowe, T.W., and Koh, P.J., “An Improved Method for the Formation of Electrical Contacts Used in the Manufacture of Planar Schottky Diodes,” Invention Disclosure submitted to the University of Virginia Patent Foundation, July 1997.Google Scholar
[15] Zimmermann, R., Zimmermann, R., and Zimmermann, P., “All Solid-State Radiometers for Environmental Studies to 700 GHz,” Third Int'l Symp. Space THz Tech., pp. 706–723, Ann Arbor, MI, March 1992.Google Scholar
[16] Siegel, P.H., Medhi, I., Dengler, R.J., Lee, T.H., Humphrey, D.A., Pease, A., “A 640 GHz Planar-Diode Fundamental Mixer/Receiver,” IEEE MTT-S International Microwave Symposium Digest, Vol. 2, Baltimore, pp. 407–410, June 7–12, 1998.Google Scholar
[17] Medhi, I., Siegel, P.H., Humphrey, D.A., Lee, T.H., Dengler, R.J., Oswald, J.E., Pease, A., Lin, R., Eisele, H., Zimmerman, R., Erickson, N., “An All Solid-State 640 GHz Subharmonic Mixer,” IEEE MTT-S International Microwave Symposium Digest, Vol. 2, Baltimore, pp. 403–406, June 7–12, 1998.Google Scholar