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Integrated Vapor Phase Cleaning and Pure no Nitridation for Gate Stack Formation

Published online by Cambridge University Press:  10 February 2011

F. Glowacki,
B. Froeschle,
L. Deutschmann,
I. Sagnes,
D. Laviale,
D. Bensahel,
A. Halimaoui,
F. Martin and
A. J. Bauer
F. Glowacki
Affiliation:
STEAG-AST elektronik GmbH, Daimlerstrasse 10, D-89160 Dornstadt, Germany
B. Froeschle
Affiliation:
STEAG-AST elektronik GmbH, Daimlerstrasse 10, D-89160 Dornstadt, Germany
L. Deutschmann
Affiliation:
STEAG-AST elektronik GmbH, Daimlerstrasse 10, D-89160 Dornstadt, Germany
I. Sagnes
Affiliation:
France Telecom - CNET, BP 98, 38243 Meylan Cedex, France
D. Laviale
Affiliation:
France Telecom - CNET, BP 98, 38243 Meylan Cedex, France
D. Bensahel
Affiliation:
France Telecom - CNET, BP 98, 38243 Meylan Cedex, France
A. Halimaoui
Affiliation:
France Telecom - CNET, BP 98, 38243 Meylan Cedex, France
F. Martin
Affiliation:
LETI-DMEL, CENG, av. des Martyrs, BP 85 X, 38041 Grenoble cedex, France
A. J. Bauer
Affiliation:
Fraunhofer Institut fuer integrierte Schaltungen, Schottkystrasse 10, D-91058 Erlangen, Germany
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Abstract

The purpose of this publication is to give an insight into process development performed in two modules which belong to a cluster tool designed for the gate stack process sequence of cleaning, gate oxidation, and polysilicon chemical vapor deposition. For the first time, following the hardware and software MESC-based standards, two suppliers have integrated complementary modules to build a cluster tool. This equipment answers the demands of the 1C Manufacturers and follows the “best of breed” approach. Four single wafer rapid thermal process chambers, a Vapor Phase Cleaning (VPC) and a Rapid Thermal Oxidation/Nitridation (RTO/N) module from STEAG-AST Elektronik, a polysilicon and a nitride chemical vapor deposition module from ASM International are currently connected together to prove the feasibility of the single wafer processing gate stack cluster tool.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997, 229
Copyright
Copyright © Materials Research Society 1997

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References

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