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Interaction between Recombination Enhanced Dislocation Glide Process Activated Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial Layers

Published online by Cambridge University Press:  01 February 2011

Yi Chen,
Michael Dudley,
Kendrick X Liu and
Robert E Stahlbush
Yi Chen
Affiliation:
yichen1@ic.sunysb.edu, Stony Brook University, Materials Science and Engineering, Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, 11794-2275, United States
Michael Dudley
Affiliation:
mdudley@notes.cc.sunysb.edu, Stony Brook University, Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Kendrick X Liu
Affiliation:
kendrick.liu@nrl.navy.mil, Naval Research Laboratory, Washington, DC, 20375-5320, United States
Robert E Stahlbush
Affiliation:
stahlbush@bloch.nrl.navy.mil, Naval Research Laboratory, Washington, DC, 20375-5320, United States
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Abstract

Electron-hole recombination enhanced glide of Shockley partial dislocations bounding expanding stacking faults and their interactions with threading dislocations in 4H silicon carbide epitaxial layers have been studied using synchrotron white beam X-ray topography and in situ electroluminescence. The mobile silicon-core Shockley partial dislocations bounding the stacking faults are able to cut through threading edge dislocations leaving no trailing dislocation segments in their wake. However, when the Shockley partial dislocations interact with threading screw dislocations, trailing 30o partial dislocation dipoles are initially deposited in their wake due to the pinning effect of the threading screw dislocations. These dipoles spontaneously snap into their screw orientation, regardless the normally immobile carbon-core Shockley partial dislocation components in the dipoles. They subsequently cross slip and annihilate, leaving a prismatic stacking fault in (2-1-10) plane with the displacement vector 1/3[01-10].

Keywords

defectsthermal stressesdislocations

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References

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