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Interdiffusion in Semiconductor Quantum Dot Structures

Published online by Cambridge University Press:  11 February 2011

P. Lever,
L. Fu,
C. Jagadish,
M. Gal and
H.H. Tan
P. Lever
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, AUSTRALIA
L. Fu
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, AUSTRALIA
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, AUSTRALIA
M. Gal
Affiliation:
School of Physics, University of New South Wales, Sydney, NSW 2052, AUSTRALIA
H.H. Tan
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, AUSTRALIA
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Abstract

The potential profile of InGaAs quantum dots (QDs) was shown to be easily modified with annealing. We also demonstrate the use of spin-on-glass to create interdiffusion in QDs but the degree of interdiffusion was strongly dependent on the properties of the oxide. By using TiO2 significant suppression of thermal diffusion of the quantum dots could be achieved. On the other hand, very large additional blue shifts (in excess of 120 meV) could be obtained with both H and As implantation. The different nature of defects created by both ions and how they affect the interdiffusion of quantum dots were illustrated. In the dose and annealing temperature range studied, the degree of interdiffusion ultimately depends on the availability of free point defects or point defects liberated from clusters/extended defects to diffuse across the quantum dots.

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References

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