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Interface Quality and Interdiffusion in Si-Ge Heterostructures

Published online by Cambridge University Press:  15 February 2011

J.-M. Baribeau,
D. J. Lockwood,
G. C. Aers and
M. W. C. Dharma-Wardana
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, KIA OR6, CANADA.
D. J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, KIA OR6, CANADA.
G. C. Aers
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, KIA OR6, CANADA.
M. W. C. Dharma-Wardana
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, KIA OR6, CANADA.
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Abstract

The evolution of interfaces of short-period (SimGen)p superlattices upon annealing has been studied by x-ray reflectometry and Raman scattering spectroscopy. Isothermal annealing treatments at 700° C resulted in a significant material redistribution as evidenced by a strong decay of the superlattice x-ray satellites and by the decay of longitudinal acoustic modes and changes in the optical mode intensity ratios in Raman scattering. Interdiffusion was more pronounced in superlattices of short periodicity. This may possibly be explained by the strong composition dependence of the diffusivity of Ge atoms in Sil-xGex alloys and the degree of preexisting interfacial mixing. This composition dependence of the diffusion may favor atomic displacement parallel to the interfaces leading to an initial smoothing of the interfaces

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