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Interface Structure and Defects in CVD 3C-SiC on (111) and (112) TiC Substrates

Published online by Cambridge University Press:  25 February 2011

Fen-Ren Chien,
S. R. Nutt,
N. Buchan,
J. M. Carulli Jr,
C. P. Beetz Jr,
W. S. Yoo and
D. Cummings
Fen-Ren Chien
Affiliation:
Division of Engineering, Brown University, Providence, RI02912, U.S.A.
S. R. Nutt
Affiliation:
Division of Engineering, Brown University, Providence, RI02912, U.S.A.
N. Buchan
Affiliation:
Advanced Technology Materials, Inc., Danbury, CT 06810, U.S.A.
J. M. Carulli Jr
Affiliation:
Advanced Technology Materials, Inc., Danbury, CT 06810, U.S.A.
C. P. Beetz Jr
Affiliation:
Advanced Technology Materials, Inc., Danbury, CT 06810, U.S.A.
W. S. Yoo
Affiliation:
Advanced Technology Materials, Inc., Danbury, CT 06810, U.S.A.
D. Cummings
Affiliation:
Advanced Technology Materials, Inc., Danbury, CT 06810, U.S.A.
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Abstract

3C-SiC, lattice-matched with TiC, is a candidate for use in wide-bandgap semiconductor devices. Epitaxial 3C-SiC films were grown on (111) and (112) TiC substrates, and defects were characterized by analytical TEM.

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References

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