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The Interface Structure of Grain Boundaries in Polysilicont†

Published online by Cambridge University Press:  15 February 2011

S. M. Johnson,
K. C. Yoo,
R.G. Rosemeier,
P. Soltani and
H. C. Lin
S. M. Johnson
Affiliation:
Solarex Corporation,Rockville, MD 20850
K. C. Yoo
Affiliation:
University of Maryland, College Park, MD 20742
R.G. Rosemeier
Affiliation:
Semix, Incorporated, Gaithersburg, MD 20760
P. Soltani
Affiliation:
Semix, Incorporated, Gaithersburg, MD 20760
H. C. Lin
Affiliation:
University of Maryland, College Park, MD 20742
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Abstract

Normal grain growth in polysilicon material proceeds by a twinning mechanism such that the individual grain orientations are related by single or multiple twinning steps. The twinning relationship between adjacent grains can result in the alignment of their boundary interfaces along certain planar segments which have a very low electrical activity. The varying degree of electrical activity of these boundaries, and boundary positions, is attributed to the smaller dislocation portion of the larger change in orientation across the grains.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982, 357
Copyright
Copyright © Materials Research Society 1982

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Footnotes

†

Work supported by Semix, Incorporated under DOE Cooperative Agreement No. DE–FCO–80 ET 23197.

References

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