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Internal Gettering in Czochralski Silicon

Published online by Cambridge University Press:  21 February 2011

Robert A. Craven
Robert A. Craven*
Affiliation:
Monsanto Electronic Materials Company 800 North Lindbergh Blvd. St. Louis, Missouri 63167
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Abstract

A review of the use of oxygen precipitation for the purposes of internal gettering in silicon is given. The review considers current ideas about oxygen precipitation mechanisms and the relationships between different precipitate morphologies. Two different paths for oxygen precipitation are considered, the first path being 450C thermal donor - coesite defects and the second being <100> oriented platelets. A summary of the uses of oxygen precipitation gettering in integrated circuit fabrication and a simple model for optimization of internal gettering follows the precipitation discussion.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984, 159
Copyright
Copyright © Materials Research Society 1985

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References

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