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Ion Beam Enhanced Adhesion

Published online by Cambridge University Press:  22 February 2011

T. A. Tombrello
T. A. Tombrello*
Affiliation:
Division of Physics, Mathematics, and Astronomy; California Institute of Technology; Pasadena, California 91125
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Abstract

We have shown that the irradiation of a wide variety of thin film-substrate combinations with MeV/amu ions leads to greatly enhanced adhesion. The systems studied include metal films on dielectric, semiconductor, and metal substrates. For metal coatings on semiconductors the electrical contact which is originally diode-like becomes ohmic. Metal films on metal or polymeric substrates generally require the lowest dose irradiations. For Au on Ta the threshold dose to achieve a constant level of adhesion (“Scotch Tape” test) is consistent with a model of the process in which the dose threshold varies with the electronic excitation part of the energy loss in the material as (dE/dx + Q)−2 . The value of Q obtained corresponds to an exothermic reaction due to the increased binding that liberates ˜70 eV at the interface. This model and a variant of it based on the production of K-shell vacancies in low Z elements in the target will be discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983, 173
Copyright
Copyright © Materials Research Society 1984

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References

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