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The Ion Implanted Arsenic Tail in Silicon

Published online by Cambridge University Press:  21 February 2011

S. E. Beck,
R. J. Jaccodine and
C. Clark
S. E. Beck
Affiliation:
Sherman Fairchild Center #161, Lehigh University, Bethlehem, PA 18015
R. J. Jaccodine
Affiliation:
Sherman Fairchild Center #161, Lehigh University, Bethlehem, PA 18015
C. Clark
Affiliation:
AT&T Bell Laboratories, 555 Union Blvd., Allentown, PA 18103
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Abstract

Rapid thermal annealed tail regions of shallow junction arsenic implants into silicon have been investigated. Tail profiles have been roduced by an anodic oxidation and stripping technique after implantation to fluences of 1014 to 1016 cm−2 and by implanting through a layer of silicon dioxide. Electrical activation and diffusion have been achieved by rapid thermal annealing in the temperature range of 800 to 1100 °C. Electrically active defects remain after annealing. Spreading resistance and deep level transient spectroscopy results are presented. The diffusion of the arsenic tail is discussed and compared with currently accepted models.

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