Hostname: page-component-7b7567c8c-2n9c9 Total loading time: 0 Render date: 2026-11-14T17:15:52.606Z Has data issue: false hasContentIssue false
  • English
  • Français

Kinetic Competition During Solid Phase Crystallization in Ion–Implanted Silicon

Published online by Cambridge University Press:  22 February 2011

G.L. Olson,
J.A. Roth,
L.D. Hess and
J. Narayan
G.L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
J.A. Roth
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
L.D. Hess
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
J. Narayan
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265Oak Ridge National Laboratory, Oak Ridge, TN 37830
Get access

Abstract

We report on an investigation of the temperature and concentration dependent kinetic competition between solid phase epitaxy and complex formation and precipitation in arsenic–implanted Si(100). Crystallization kinetics were monitored using time–resolved reflectivity during cw laser irradiation or furnace heating; microstructural changes were evaluated using cross–sectional TEM. At low temperatures and high As concentrations, complex formation and precipitation substantially alter the SPE kinetics. At higher temperatures competing interactions are less significant, and SPE becomes the dominant process. The kinetic competition between these processes is discussed with respect to the vacancy model for SPE.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983, 375
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Csepregi, L., Kennedy, E.F., Gallagher, T.J., Mayer, J.W. and Sigmon, T.W., J. Appl. Phys. 48, 4234 (1977).Google Scholar
2.Kennedy, E.F., Csepregi, L., Mayer, J.W., and Sigmon, T.W., J. Appl. Phys. 48, 4241 (1977).Google Scholar
3.Williams, J.S. and Elliman, R.G., Appl. Phys. Lett. 37, 829 (1980);Google Scholar
Narayan, J. and Holland, O.W., Phys. Stat. Solidi(a) 73, 225 (1982).Google Scholar
4.Fair, R.B. and Weber, G.R., J. Appl. Phys. 44, 273 (1973).Google Scholar
5.Csepregi, L., Küllen, R.P., Mayer, J.W., and Sigmon, T.W., Sol. St. Comm. 21, 1019 (1977).Google Scholar
6. For a review of this model, see Suni, I., Goltz, G., Nicolet, M–A., and Lau, S.S., Thin Solid Films 93, 171 (1982).Google Scholar
7.Williams, J.S. and Elliman, R.G., Nucl. Instr. Meth. 183, 389 (1981).Google Scholar
8.Regolini, J.L., Sigmon, T.W., and Gibbons, J.F., Appl. Phys. Lett. 35, 114 (1979).Google Scholar
9.Lietoila, A., Gibbons, J.F., Magee, T.J., Peng, J., and Hong, J.D., Appl. Phys. Lett. 35, 532 (1979).Google Scholar
10.Lietoila, A., Gibbons, J.F., and Sigmon, T.W., Appl. Phys. Lett. 36, 765 (1980).Google Scholar
11.Lietoila, A., Gold, R.B., Gibbons, J.F., Sigmon, T.W., Scovell, P.D., and Young, J.M., J. Appl. Phys. 52, 230 (1981).Google Scholar
12. For a recent review, see Olson, G.L., Kokorowski, S.A., Roth, J.A., and Hess, L.D., in Laser–Solid Interactions and Transient Thermal Processing of Materials, Narayan, J., Brown, W.L. and Lemons, R.A., Eds.,(North Holland, New York, 1983) pp. 141–154.Google Scholar
13.Lau, S.S. and Mayer, J.W., “Epitaxial Growth of Si Structures–Thermal, Laser, and Electron Beam Induced”, in Treatise in Materials and Technology, vol. 24, Tu, K.N. and Rosenberg, R., Eds., (Academic Press, 1983), chap. 3 and references therein.Google Scholar
14.Olson, G.L., Roth, J.A., Hess, L.D. and Narayan, J., to be published in the “Proceedings of the U.S.–Japan Seminar on Solid Phase Epitaxy and Interface Kinetics,” (Oiso, Japan, June 20–24, 1983).Google Scholar
15.Narayan, J. and Holland, O.W., unpublished results.Google Scholar