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Laser Induced Defects and Materials Interactions in the V-Si System*

Published online by Cambridge University Press:  15 February 2011

B. R. Appleton,
B. Stritzker,
C. W. White,
J. Narayan,
J. Fletcher,
O. Meyer and
S. S. Lau
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
B. Stritzker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
J. Fletcher
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
O. Meyer
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
S. S. Lau
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
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Abstract

Pulsed laser annealing has been evaluated as a technique for fabricating superconducting V3 Si from multilayer V-Si samples, and the nature of laser-induced defects in V3 Si single crystals has been examined. Correlated analyses by ion scattering, ion channeling, Tc measurements and TEM were used to examine the composition and structure of samples subjected to single and multiple laser pulses. It was observed that although the superconducting A15 phase could be formed by pulsed laser mixing, the associated rapid quenching effects introduced defects which were not completely removed by thermal annealing to 925 K for 1 hour. Ion channeling and TEM studies of V3 Si single crystals showed that pulsed laser irradiation caused microcracks to develop in the surface, probably from mechanical stresses induced by thermal gradients.

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Footnotes

+

Guest scientist from Institute fur Festkorforschung, KFA, Julich, Germany.

++

Guest scientist from Nuclear Research Center, Karlsruhe, Germany.

**

University of California at San Diego, La Jolla, California.

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W-7409-eng-26 with Union Carbide Corporation.

References

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