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Laser Interactions with Optical Recording Materials

Published online by Cambridge University Press:  28 February 2011

Ernesto E. Marinero
Ernesto E. Marinero*
Affiliation:
IBM Research, Almaden Research Center, 650 Harry Rd., San Jose, CA 95120-6099
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Abstract

Laser-material interactions are pivotal to optical storage technology. Laser quenching and thermomagnetic processes form the memory basis for approaches based on “phase-change” materials and magneto-optical alloys respectively. Recent progress in phase-change materials indicates that compound semiconductors as well as single element materials are characterized by fast crystallization times. In this work we review, utilizing time-resolved optical and conductivity probes, the melt-kinetics and glass formation processes in Te thin films and the laser-induced crystallization of amorphous GeTe. The latter studies are complemented by x-ray diffraction and TEM analysis. Results are also presented on time-resolved Kerr rotation studies to investigate the magnetic domain formation kinetics in thermo-magnetic recording. Material research problems facing laser interactions with optical recording materials will be discussed.

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References

1. Feinleib, J., deNeufville, J., Moss, S.C. and Ovshinsky, S.R., Appl. Phys. Lett. 18, 254, (1971).Google Scholar
2. vonGuttfeld, R.J. and Chaudhari, P., J. Appl. Phys. 43, 4688, (1972).Google Scholar
3. Brown, B.R., Appl. Opt. 13, 761, (1974).CrossRefGoogle Scholar
4. Smith, A.W., Appl. Opt. 13, 795, (1974).Google Scholar
5. Takenaga, M., Yamada, N., Ohara, S., Nishiuchi, K., Nagashima, M., Kashihara, T., Nakumara, S. and Yamashita, T., Proc. Soc. Photo-Opt. Inst. Eng., 420, 173, (1983).Google Scholar
6. Chen, M., Rubin, K.A. and Barton, R.W., Appl. Phys. Lett. 49, 502, (1986).Google Scholar
7. Turnbull, D., Contemp. Phys. 10, 473, (1969).Google Scholar
8. Chaudhari, P., Cuomo, J.J. and Gambino, R.J., Appl. Phys. Lett., 22, 337, (1973).Google Scholar
9. Imamura, N., Mimura, Y. and Kobayashi, T., IEEE Trans. Magn., MAG–12 2, 55, (1976).Google Scholar
10. Bell, A.E. and Pong, F.W., IEEE J. Quant. Elect., QE–14, 487, (1978).Google Scholar
11. Imamura, N., Tanaka, S., Tanaka, F. and Nagao, Y., IEEE Trans. Magn. MAG–21, 1607, (1985).CrossRefGoogle Scholar
12. Dariel, M.P., Holthuis, J.T. and Pickus, M.R., J. Less Common Mat., 45, 91, (1976).Google Scholar
13. Katayama, T., Hasegawa, H., Kawanishi, K. and Tsushima, T., J. Appl. Phys. 49, 1759, (1978).Google Scholar
14. Anthony, T.C., Brug, J., Naberhuis, S. and Birecki, H., J. Appl. Phys. 59, 213, (1986).Google Scholar
15. Tourand, G. and Brevil, M., J. Phys.(Paris), 32, 813, (1971).Google Scholar
16. Barrue, R. and Perron, J.C., Phil. Mag. B, 51, 317, (1985).Google Scholar
17. Glazov, V.M., Chizhevskaya, S.N. and Glagoleva, N.N., “Liquid Semiconductors”, Ch. III (Plenum Press, New York 1969) pp 84.Google Scholar
18. Keller, H. and Stuke, J., Phys. Stat. Sol., 8, 831, (1965).Google Scholar
19. Marinero, E.E., Pamler, W. and Chen, M., “Beam-Solid Interactions and Phase Transformations”, ed. H., Kurz, G.L., Olson and J.M., Poate (Materials Res. Soc. Pittsburg 1986) pp 289.Google Scholar
20. Pamler, W. and Marinero, E.E., J. Appl. Phys. (in press).Google Scholar
21. Bahl, S.K. and Chopra, K.L., J. Appl. Phys., 41, 2196, (1970).Google Scholar
22. Chopra, K.L. and Bahl, S.K., J. Appl. Phys., 40, 4171, (1969).Google Scholar
23. Huber, E. and Marinero, E.E., “Beam-Solid Interactions and Transient Processes”, MRS Symp. Dec. 86.Google Scholar
24. Jackson, K.A. in “Surface Modification and Alloying”, ed. J.M., Poate, G., Foti and D.C., Jacobson (Plenum Press, New York, 1983).Google Scholar
25. Suits, J.C., Geiss, R.H., Lin, C.J., Rugar, D. and Bell, A.E., Appl. Phys. Lett., 49, 419, (1986).Google Scholar
26. Rubin, K., Barton, R. W. and Chen, M., Proc. Tech. Digest, “Optical Data Storage”, Oct. 1985, Washington, D.C., OSA publication.Google Scholar