Hostname: page-component-7b7567c8c-2n9c9 Total loading time: 0 Render date: 2026-11-14T00:33:43.978Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Processing of Amorphous Silicon for Polysilicon Devices, Circuits and Flat-Panel Imagers

Published online by Cambridge University Press:  17 March 2011

J. B. Boyce,
R. T. Fulks,
J. Ho,
J. P. Lu,
P. Mei,
R. A. Street,
K. F. Van Schuylenbergh and
Y. Wang
J. B. Boyce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. T. Fulks
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. Ho
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. P. Lu
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
P. Mei
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
K. F. Van Schuylenbergh
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Y. Wang
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Get access

Abstract

Pulsed excimer-laser processing of amorphous silicon on non-crystalline substrates allows for the fabrication of high-quality polysilicon thin-film transistors (TFTs). It also provides procedures for doping self-aligned amorphous silicon TFTs. In addition, laser-crystallized polysilicon exhibits some interesting materials properties, such as, large lateral grain growth with a corresponding enhancement in the electron mobility. Under optimized processing conditions, excellent polysilicon TFTs with high mobilities, sharp turn on, low off-state leakage currents and good spatial uniformity have been achieved. These improved parameters, particularly the low off-state leakage currents and good uniformity, enable not only displays but also the moredemanding flat-panel imaging arrays to be fabricated in polysilicon. Results on both polysilicon CMOS circuits and a polysilicon flat-panel imager are presented.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Blake, J. G., King, M. C., Stevens, J. D. III, and Young, R., Solid State Technology, 40 (5), 151 (1997).Google Scholar
2. Street, R. A., Apte, R. B., Ready, S. E., Weisfield, R. L. and Nylen, P., Mat. Res. Soc. Proc., 487, 399 (1998).Google Scholar
3.See, for a review, Boyce, J. B. and Mei, P., “Laser Crystallization for Polycrystalline Silicon Device Applications”, in Technology and Applications of Amorphous Silicon, Ed. Street, R. A., Springer Series in Materials Science, 37 (Springer-Verlag, Berlin, 2000), Chapter 3, pp. 94–146, and the references contained therein to the original work.Google Scholar
4.See, e.g., Brotherton, S. D., Semiconductor Science Technology, 10, 721 (1995), and references therein.Google Scholar
5. Carey, P. G., Smith, P. M., Theiss, S. D., Wickboldt, P., Sigmon, T. W., Tung, Y. J., and King, T. J., Lasers and Electro-Optics Society Annual Meeting-LEOS, 1, 126 (1998).Google Scholar
6. Boyce, J. B., Mei, P., Fork, D. K., Anderson, G. B., and Johnson, R. I., Mat. Res. Soc. Proc., 403, 305 (1996).Google Scholar
7. Boyce, J. B., Mei, P., Fulks, R. T., and Ho, J., Phys. Stat. Sol. (a), 166, 729 (1998).Google Scholar
8. Lu, J. P., Mei, P., Fulks, R. T., Rahn, J., Ho, J., Wang, Y., Boyce, J. B., and Street, R. A., J. Vac. Sci. Technol. A 18(4) (2000).Google Scholar
9. Mei, P., Boyce, J. B., Lu, J. P., Ho, J. and Fulks, R. T., Proc. 18th International Conference on Amorphous and Microcrystalline Semiconductors, Snowbird, UT, Aug.,1999, Journal of Non-Crystalline Solids (in press).Google Scholar
10. Mei, P., Anderson, G. B., Boyce, J. B., Fork, D. K., Hack, M., Johnson, R. I., Lujan, R., Ready, S. E., Wu, I. W., Electrochem. Soc. Proc, 94–35, 92 (1995).Google Scholar
11. Fogarassy, E., Pattyn, H., Elliq, M., Slaoui, A., Prevot, B., Stuck, R., Unamuno, S. de, and Matthe, E. L., Appl. Surface Science, 69, 231 (1993).Google Scholar
12. Carey, P. G. and Sigmon, T. W., Appl. Surface Sci., 43, 325 (1989).Google Scholar
13. Rahn, J. T., Lemmi, F., Lu, J.P., Mei, P., Street, R. A., Ready, S. E., Ho, J., Apte, R., Schuylenbergh, K. van, Lau, R., Weisfield, R., Lujan, R., and Boyce, J. B., SPIE Proc. of Medical Applications of Penetrating Radiation (1999).Google Scholar
14. Lu, J. P., Mei, P., Rahn, J., Ho, J., Wang, Y., Boyce, J. B. and Street, R. A., Proc. 18th International Conference on Amorphous and Microcrystalline Semiconductors, Snowbird, UT, Aug., 1999, Journal of Non-Crystalline Solids (in press).Google Scholar
15. Fulks, R. T., Boyce, J. B., Ho, J., Davis, G. A., and Aebi, V., Mat. Res. Soc. Proc., 557 (1999).Google Scholar