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Laser Recrystallization Technique for Active Matrix LC Display

Published online by Cambridge University Press:  21 February 2011

T Nishimura,
A. Ishizu,
T. Matsumoto and
Y. Akasaka
T Nishimura
Affiliation:
LSI R&D Lab. Mitsubishi Electric Corp., Itami 664, Japan
A. Ishizu
Affiliation:
Material Engineering Lab. Mitsubishi Electric Corp., Amagasaki 661 Japan
T. Matsumoto
Affiliation:
Material Engineering Lab. Mitsubishi Electric Corp., Amagasaki 661 Japan
Y. Akasaka
Affiliation:
LSI R&D Lab. Mitsubishi Electric Corp., Itami 664, Japan
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Abstract

This paper demonstrates the technological approach to the high performance thin film transistor (TFT) fabricated by using the laser-recrystallization technique on a fused quartz wafer and its application for active matrix type liquid crystal display (LCD) with transmissive mode. Problem to be overcome and still ahead in the recrystallization, TFT performance, and application for LCD are addressed.

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References

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