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Laser-Induced Surface Defects

Published online by Cambridge University Press:  15 February 2011

Jean-Marie Moison and
Marcel Bensoussan
Jean-Marie Moison
Affiliation:
Centre National d'Etudes des Télécommunications, Département OMT *, 196 rue de Paris 92220 Bagneux - France
Marcel Bensoussan
Affiliation:
Centre National d'Etudes des Télécommunications, Département OMT *, 196 rue de Paris 92220 Bagneux - France
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Abstract

The influence of pulsed laser processing (PLP) on the structure and composition of Si, GaAs, Inp and au surfaces has been investigated as a function of the laser fluence. Above a threshold fluence, all initial structures turn into a (1×1) structure and the V-element content of the compound surfaces is decreased. The structure change is shown to be related to the existence of a number of atomic steps on the Plp surface (up to 10114 /cm2 equivalent broken bonds). These defects can be eliminated by further annealings. On the other hand, the stoechiometry defects, which are less numerous (1012−1013/cm2) cannot be eliminated. A model for the mechanisms of defect creation and annihilation during PLP is outlined. The incidence of PLP-induced defects on device technology is evaluated.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982, 329
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Laboratoire associé au C.N.R.S. L.A. 250

References

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