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Lateral Solid Phase Epitaxy of Silicon Over Oxide

Published online by Cambridge University Press:  22 February 2011

J.A. Roth,
G.L. Olson and
L.D. Hess
J.A. Roth
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road Malibu, CA 90265
G.L. Olson
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road Malibu, CA 90265
L.D. Hess
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road Malibu, CA 90265
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Abstract

We review recent progress in the growth of siliconon-insulator films by lateral solid phase epitaxy. The temperature dependence of the rates of random crystallization and solid phase epitaxy are used to predict the maximum growth of Si over oxide achievable by this technique. Actual overgrowth distances of 10 μm obtained in UHV-deposited films are considerably less than the values predicted. Several possible causes of the difference between observed and predicted overgrowth are discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983, 431
Copyright
Copyright © Materials Research Society 1984

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References

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