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A Leed Study of Bismuth Overlayer Formation on InSb(110)

Published online by Cambridge University Press:  25 February 2011

T. Guo,
K. J. Wan and
W. K. Ford
T. Guo
Affiliation:
Advanced Materials Center and the Department of Physics, Montana State University, Bozeman, Montana 59717
K. J. Wan
Affiliation:
Advanced Materials Center and the Department of Physics, Montana State University, Bozeman, Montana 59717
W. K. Ford
Affiliation:
Advanced Materials Center and the Department of Physics, Montana State University, Bozeman, Montana 59717
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Abstract

LEED and Auger electron spectroscopy have been used to studied the interface formation of bismuth on InSb(110). For the first time, well defined superstructures were observed at room temperature on metal/semimetal-III-V semiconductors. A (1×2) phase, at 0.5 ML bismuth coverage, and a (1×3) phase, at 0.4 ML bismuth coverage, appear with different thermal heat cycling. The dynamical origin of these phases is thought to be a repulsive interaction between overlayer chains due to the detailed geometry of the overlayer chain structure and to the overlayer induced strain field within the substrate.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989, 39
Copyright
Copyright © Materials Research Society 1990

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References

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