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Local structure around Er in MeV Er-implanted silica

Published online by Cambridge University Press:  15 February 2011

A. Polman,
M. A. Marcus,
D. C. Jacobson and
J. M. Poate
A. Polman
Affiliation:
AT&T Bell Laboratories, 600, Mountain Avenue, Murray Hill, NJ 07974, USAFOM-Institute for Atomic and Molecular Physics, P.O. Box 41883 1098 SJ Amsterdam, The Netherlands
M. A. Marcus
Affiliation:
AT&T Bell Laboratories, 600, Mountain Avenue, Murray Hill, NJ 07974, USA
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, 600, Mountain Avenue, Murray Hill, NJ 07974, USA
J. M. Poate
Affiliation:
AT&T Bell Laboratories, 600, Mountain Avenue, Murray Hill, NJ 07974, USA
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Abstract

Amorphous SiO2 films, 10 μm thick, were grown on Si(100) substrates and subsequently implanted with 5.0×1015 Er ions/cm2 at an energy of 3.5 MeV. When optically pumped at λ = 488 nm, the implanted films show a sharply peaked photoluminescence spectrum centred around λ. = 1.54 μm, corresponding to an intra-4f transition of Er3+. Thermal treatment at temperatures above 700 °C is needed to anneal out the implantation-induced defects and attain a maximum PL intensity and luminescence lifetime (15 ms). Extended x-ray absorption fine structure (EXAFS) spectra of Er-implanted bulk silica samples (3.4×1016 ions/cm2, 2.9 MeV) indicate that the Er has six O first neighbours at a distance around 2.25 Å. The results are similar to those for bulk samples doped with Er in the molten phase.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 244: Symposium J – Optical Waveguide Materials , 1991, 381
Copyright
Copyright © Materials Research Society 1992

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References

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