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Localized Donors in Gan: Spectroscopy Using Large Pressures

Published online by Cambridge University Press:  10 February 2011

C. Wetzel,
H. Amano,
I. Akasaki,
T. Suski,
J. W. Ager,
E. R. Weber,
E. E. Haller and
B. K. Meyer
C. Wetzel
Affiliation:
High Tech Research Center, Meijo University, Tempaku-ku, 468 Nagoya, Japan, Wetzel@meijo-u.ac.jpMaterials Science Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA 94720, USA
H. Amano
Affiliation:
High Tech Research Center, Meijo University, Tempaku-ku, 468 Nagoya, Japan, Wetzel@meijo-u.ac.jp
I. Akasaki
Affiliation:
High Tech Research Center, Meijo University, Tempaku-ku, 468 Nagoya, Japan, Wetzel@meijo-u.ac.jp
T. Suski
Affiliation:
High Pressure Research Center, Warsaw, Poland
J. W. Ager
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA 94720, USA
E. R. Weber
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA 94720, USA
E. E. Haller
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA 94720, USA
B. K. Meyer
Affiliation:
1. Physics Institute, Justus-Liebig-University Giessen, 35392 Giessen, Germany
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Abstract

Properties of GaN and its alloys are strongly controlled by impurities and strain. Using large hydrostatic and biaxial pressure we identify the role of donor dopants and stress induced fields. The doping of Si and 0 as relevant representatives of group-IV and group-VI impurities are studied in Raman spectroscopy. For pressures above 20 GPa we find that oxygen induces a strongly localized gap state while Si continues to behave as a hydrogenic donor. Such a DX-like behavior of 0 indicates and corresponds to doping limitations in AIGaN alloys. The site specific (ON, SiGa) formation of a gap-state is attributed to bond strengths of the respective neighbors. In photoreflection of pseudomorphic GaInN we observe pronounced Franz-Keldysh oscillations corresponding to piezoelectric fields of 0.6 MV/cm. An observed redshift of the luminescence is found to originate in electric field induced tailstates. A reduced but similar effect is expected for GaN possibly explaining observations of persistent photoconductivity in a wide range of materials.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997, 489
Copyright
Copyright © Materials Research Society 1998

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