Hostname: page-component-7b7567c8c-fvjsw Total loading time: 0 Render date: 2026-11-14T22:21:03.376Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Frequency Studies of Amorphous Silicon using a Dielectric Spectroscopic Method.

Published online by Cambridge University Press:  26 February 2011

C. Pickup,
R. W. Cochrane and
J. L. Brebner
C. Pickup
Affiliation:
Dép. de physique, Université de Montréal, C.P. 6128, Succ. “A”, Montréal, Québec H3C 3J7 CANADA
R. W. Cochrane
Affiliation:
Dép. de physique, Université de Montréal, C.P. 6128, Succ. “A”, Montréal, Québec H3C 3J7 CANADA
J. L. Brebner
Affiliation:
Dép. de physique, Université de Montréal, C.P. 6128, Succ. “A”, Montréal, Québec H3C 3J7 CANADA
Get access

Abstract

Cr-metallised amorphous silicon samples have been studied as a function of temperature using a dielectric technique with probe frequencies in the range 10 mHz to 10 KHz. The data is presented in the form logC′, logC″ versus log frequency, where C′, C″ represent, respectively, the real and imaginary components of the complex capacitance. An accurate analysis of the data provides evidence of Schottky barrier-like behaviour in which the signature from the response of two deep centres is also observed. These represent the existence of two defects lying at energies of 0.61 and 0.74eV from a band edge. Additional information is shown in which the parallel barrier conductance is activated with an energy of 0.71eV. Similarities and differences due to different contact materials are discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988, 525
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Jonscher, A.K., Pickup, C., and Zaidi, S.S.H., Semicond. Sci. and Technol. Vol.1, No. 1, pp. 71–92 (1986).CrossRefGoogle Scholar
2. Zaidi, S.S.H. and Jonscher, A.K., Semicond. Sci. and Technol. Vol.2, No. 9, 1987, pp. 587–596.Google Scholar
3. Shockley, W. and Read, W.T., Phys. Rev. Vol.87, 835 (1952).Google Scholar
4. Hill, R.M. and Jonscher, A.K., Contemp. Phys. Vol.24, 75 (1983).Google Scholar
5. Dissado, L.A. and Hill, R.M..: Proc. Roy. Soc. Lond. A390, pp 131–180 (1983).Google Scholar
6. Hill, R.M., Private Communication.Google Scholar
7. Perluzzo, G., Aktik, C., Currie, J.F., Poulin-Dandurand, S., Yelon, A., Brebner, J.L., and Cochrane, R.W., Can. J. Phys. Vol.65, pp. 1017–1029 (1987).Google Scholar
8. Pugh, J., IEE Publ. No. 239, pp 247–250 (1984).Google Scholar
9. Jonscher, A.K., “Dielectric Relaxation in Solids”, London: Chelsea Dielectric Press (1983).Google Scholar
10. Werner, J., Levi, A.F.J., Tung, R.T., Anzlowar, M., and Pinto, M., Phys. Rev. Lett., Vol.60, No. 1 (1988).CrossRefGoogle Scholar