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Low Interface State Density at Pseudomorphic ZnSe/Epitaxial GaAs Interface

Published online by Cambridge University Press:  28 February 2011

Q.-D. Qian,
J. Qiu,
M. Kobayashi,
R.L. Gunshor,
L.A. Kolodziejski,
M.R. Melloch,
J.A. Cooper,
J.M. Gonsalves and
N. Otsuka
Q.-D. Qian
Affiliation:
Purdue University, West Lafayette, Indiana, 47907, USA
J. Qiu
Affiliation:
Purdue University, West Lafayette, Indiana, 47907, USA
M. Kobayashi
Affiliation:
Purdue University, West Lafayette, Indiana, 47907, USA
R.L. Gunshor
Affiliation:
Purdue University, West Lafayette, Indiana, 47907, USA
M.R. Melloch
Affiliation:
Purdue University, West Lafayette, Indiana, 47907, USA
J.A. Cooper
Affiliation:
Purdue University, West Lafayette, Indiana, 47907, USA
J.M. Gonsalves
Affiliation:
Purdue University, West Lafayette, Indiana, 47907, USA
N. Otsuka
Affiliation:
Purdue University, West Lafayette, Indiana, 47907, USA
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Abstract

The electrical properties of pseudomorphic ZnSe/epilayer GaAs heterointerfaces, grown by MBE, have been investigated by capacitance versus voltage (C-V) and current versus voltage (I- V) measurements. Hole accumulation and inversion were observed in ZnSe/p-GaAs interfaces and ZnSe/n-GaAs interfaces, respectively. The C-V characteristics of the Au/ZnSe/p-GaAs capacitors are nearly ideal, exhibiting an interface state density (2.5x1011cm-2) which compares favorably with the densities reported at AlGaAs/GaAs interfaces.

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References

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