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Low Resistive and Low Absorptive Nitride-Based Tunnel junctions

Published online by Cambridge University Press:  13 February 2015

Daichi Minamikawa,
Daiki Takasuka,
Masataka Ino,
Motoaki Iwaya,
Tetsuya Takeuchi,
Satoshi Kamiyama and
Isamu Akasaki
Daichi Minamikawa
Affiliation:
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan.
Daiki Takasuka
Affiliation:
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan.
Masataka Ino
Affiliation:
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan.
Motoaki Iwaya
Affiliation:
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan.
Tetsuya Takeuchi
Affiliation:
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan.
Satoshi Kamiyama
Affiliation:
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan.
Isamu Akasaki
Affiliation:
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan.Graduate School of Engineering, Akasaki Research Center, Nagoya University, Nagoya 464-8601, Japan
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Abstract

We have investigated two approaches for an alternative hole injection with a tunnel junction targeting deep UV-LEDs. One was an AlGaN-based tunnel junction. We fabricated the AlGaN-based tunnel junctions with various AlN mole fractions (0～0.2) grown on conventional blue-LEDs by MOVPE. A 7.5 nm heavily Mg-doped GaN/15 nm heavily Si-doped Al0.2Ga0.8N tunnel junction showed a large voltage drop, 5.31 V at 20 mA, under reverse bias. The other was a GaInN-based tunnel junction. We prepared Ga0.6In0.4N tunnel junctions with various thicknesses and Si doping levels grown on the blue LEDs by MOVPE. A 2 nm heavily Mg-doped Ga0.6In0.4N/3 nm heavily Si-doped GaN tunnel junction showed only 0.12 V drop at 20mA under reverse bias. Since an absorption of the thin GaInN tunnel junction was estimated to be less than 10 %, such a tunnel junction with small bandgap and thin layer thickness is a practical approach to obtain a low resistive and low absorptive hole injection in the deep UV-LEDs.

Keywords

III-Vnitrideoptoelectronic

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