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Low-Temperature Growth and Structural Characterization of GaAs Using Ionized Source Beam Epitaxy

Published online by Cambridge University Press:  21 February 2011

D.-W. Roh and
K. Kim
D.-W. Roh
Affiliation:
Electronics and Telecommunications Research Institute, Taejon, Korea
K. Kim
Affiliation:
ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

Single-crystal GaAs films were grown on SI (100) GaAs at substrate temperatures below 200 °C by using ionized source beam epitaxy. The correlation between the properties of the films and the growth parameters, in particular, the substrate temperature, the amount of As-source beam ionization, and the acceleration voltage of the As beam was investigated to elucidate the possible benefits of source beam ionization and acceleration on low-temperature thin film growth. The use of ionized and accelerated As-source beam greatly improved the quality of the low-temperature grown GaAs film. The surface morphology, crystallinity, and micro structure of the low temperature grown GaAs films were evaluated using in situ reflection high energy electron diffraction, double crystal X-ray diffraction, and cross section transmission electron microscopy.

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References

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