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Low-Temperature PETEOS-to-PETEOS Wafer Bonding Using Titanium as Bonding Intermediate

Published online by Cambridge University Press:  01 February 2011

Jian Yu,
Richard L. Moore,
Sang Hwui Lee,
J. Jay McMahon,
Jian-Qiang Lu and
Ronald J. Gutmann
Jian Yu
Affiliation:
jyu816@yahoo.com, Rensselaer Polytechnic Institute, ECSE, CII-6015, Rensselaer Polytechnic Institute, Troy, NY, 12180, United States
Richard L. Moore
Affiliation:
RMoore@uamail.albany.edu, University at Albany-SUNY, College of Nanoscale Science and Engineering, Albany, NY, 12203, United States
Sang Hwui Lee
Affiliation:
lees@rpi.edu, Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, NY, 12180, United States
J. Jay McMahon
Affiliation:
mcmahj@rpi.edu, Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, NY, 12180, United States
Jian-Qiang Lu
Affiliation:
luj@rpi.edu, Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, NY, 12180, United States
Ronald J. Gutmann
Affiliation:
gutmar@rpi.edu, Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, NY, 12180, United States
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Abstract

Bonding of pre-processed silicon wafers at back-end-of-the-line (BEOL) compatible conditions is one of the attractive approaches for three-dimensional (3D) integration. Among various technologies being evaluated, bonding of low temperature oxides (e.g., plasma-enhanced tetraethylorthosilicate (PETEOS)) is of great interest. In this work, we report low-temperature PETEOS-to-PETEOS wafer bonding, using a thin layer of titanium (Ti) as bonding intermediate. The bonding strength is evaluated qualitatively, while the bonding interface is examined by Auger electron spectroscopy (AES) and scanning electron microscopy (SEM). Preliminary results of PETEOS/Ti/PETEOS bonding on patterned wafers with single-level Cu damascene structures are also discussed.

Keywords

bondingTioxide

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References

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