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Magnetron Enhanced Reactive Ion Etching in a Hexode System

Published online by Cambridge University Press:  28 February 2011

Scott Bell and
Thijs Bril
Scott Bell
Affiliation:
Philips Research Laboratories/Signetics, Sunnyvale, CA 94088-3409
Thijs Bril
Affiliation:
Philips Research Laboratories/Signetics, Sunnyvale, CA 94088-3409
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Abstract

A method of forming a uniform magnetic field in a modified hexode type etch system is described.Experimental results of etching Si, SiO2 and photoresist with NF3 are presented.The magnetic field effectively increases the ion flux and decreases the energy of the ions bombarding the cathode.It was found that adding a magnetic field increases the etchrate of Si for the conditions studied, but for SiO2 and photoresist, the decreased ion bombardment energy leads to lower etchrates under certain conditions.The resulting effect on selectivities is discussed.

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Type
Articles
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MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986, 53
Copyright
Copyright © Materials Research Society 1986

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