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Materials and Structures for High Density I/O Interconnection Systems

Published online by Cambridge University Press:  21 February 2011

S. Hong,
J. C. Bravman,
T. P. Weihs and
O. K. Kwon
S. Hong
Affiliation:
Dept. of Materials Science and Engineering, Stanford University, Stanford, CA. 94305
J. C. Bravman
Affiliation:
Dept. of Materials Science and Engineering, Stanford University, Stanford, CA. 94305
T. P. Weihs
Affiliation:
Dept. of Materials Science and Engineering, Stanford University, Stanford, CA. 94305
O. K. Kwon
Affiliation:
Dept. of Electrical Engineering, Stanford University, Stanford, CA. 94305
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Abstract

In order to examine the use of a compliant cantilever structure as a contact scheme for a Multi-chip Interconnection System (MIS), multi-layer (metals and SiO2) cantilever beams were fabricated utilizing standard silicon processing and micromachining technologies. The mechanical behavior and electrical characteristics of the beams were investigated in order to establish their optimum dimensions for use in the MIS. During the course of this study, a new mechanical testing method for thin films has also been developed, which makes use of the same cantilever beam structure and a “Nanoindenter.” The Young's modulus and yield strength of thermally grown SiO2 and Au were measured using this technique.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 108 , 1987, 309
Copyright
Copyright © Materials Research Society 1988

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References

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